Technologies from featured Stanford researchers working in semiconductor innovation. Stacey Bent Lab S20-290 Selective Atomic Layer Deposition of Al2O3 with a New Precursor and Small Molecule Inhibitor Josiah Yarbrough Il-Kwon Oh Stacey Bent S20-277 Advanced precursor for selective atomic layer deposition of Al2O3 Stacey Bent Il-Kwon Oh Debbie Senesky Lab S22-260 Iridium Oxide Schottky Contacts for High Temperature Aluminum Nitride-Based Devices Savannah Eisner Debbie Senesky S21-158 Method to Measure Magnetic Field at AC Frequencies without Using Current Spinning Anand Lalwani Ananth Yalamarthy Hannah Alpert Maximillian Holliday Debbie Senesky Carla Pinzon S19-035 No-switching AC magnetic Hall-effect measurement method Ananth Yalamarthy Anand Lalwani Hannah Alpert Maximillian Holliday Saleh Kargarrazi Debbie Senesky Jelena Vuckovic Lab S20-362 Silicon-Carbide-on-Insulator via photoelectrochemical etching Daniil Lukin Jelena Vuckovic Eric Pop Lab S20-330 Two-Fold Reduction of Switching Current Density in Phase-Change Memory Asir Intisar Khan Eric Pop Raisul Islam H.-S. Philip Wong Kenneth Goodson Mehdi Asheghi Heungdong Kwon Juan Rivas-Davila Lab S20-045 High-Efficiency, Low Voltage Stress Power Amplifier with Push-Pull Wave-Shaping Operation Juan Rivas-Davila Lei Gu Tuofei Chen S19-234 High Efficiency, High Power, Variable Output of Multiple Power Amplifiers Kawin Surakitbovorn Juan Rivas-Davila Lei Gu S19-044 Wide bandgap (WBG) power semiconductors with reduced gate loss Juan Rivas-Davila Lei Gu Jiale Xu Srabanti Chowdhury Lab S20-474 Photoconductive Switch in Diamond Srabanti Chowdhury Kelly Woo Arunava Majumdar S19-134 High performance, lower cost III-N devices via buried p-type epitaxial layer activation Srabanti Chowdhury Dong Ji S19-069 Heterogenous Integration of Diamond and GaN Transistors for Complementary Logic Operation Srabanti Chowdhury Mohamadali Malakoutian Matthew Laurent Siwei Li Chenhao Ren Shanhui Fan Lab S20-206 Space Charge Trap-Assisted Recombination Suppressing Layer for Low-Voltage Light-Emitting Diode Operation Parthiban Santhanam Shanhui Fan Jonathan Fan Lab S20-204 Photonic Device Metasurface Optimization with Guaranteed Device Fabricability Jonathan Fan Jiaqi Jiang Mingkun Chen Aaron Lindenberg Lab S19-491 Next-Generation Nonvolatile Memory Jun Xiao Aaron Lindenberg
S20-290 Selective Atomic Layer Deposition of Al2O3 with a New Precursor and Small Molecule Inhibitor Josiah Yarbrough Il-Kwon Oh Stacey Bent
S22-260 Iridium Oxide Schottky Contacts for High Temperature Aluminum Nitride-Based Devices Savannah Eisner Debbie Senesky
S21-158 Method to Measure Magnetic Field at AC Frequencies without Using Current Spinning Anand Lalwani Ananth Yalamarthy Hannah Alpert Maximillian Holliday Debbie Senesky Carla Pinzon
S19-035 No-switching AC magnetic Hall-effect measurement method Ananth Yalamarthy Anand Lalwani Hannah Alpert Maximillian Holliday Saleh Kargarrazi Debbie Senesky
S20-330 Two-Fold Reduction of Switching Current Density in Phase-Change Memory Asir Intisar Khan Eric Pop Raisul Islam H.-S. Philip Wong Kenneth Goodson Mehdi Asheghi Heungdong Kwon
S20-045 High-Efficiency, Low Voltage Stress Power Amplifier with Push-Pull Wave-Shaping Operation Juan Rivas-Davila Lei Gu Tuofei Chen
S19-234 High Efficiency, High Power, Variable Output of Multiple Power Amplifiers Kawin Surakitbovorn Juan Rivas-Davila Lei Gu
S19-044 Wide bandgap (WBG) power semiconductors with reduced gate loss Juan Rivas-Davila Lei Gu Jiale Xu
S19-134 High performance, lower cost III-N devices via buried p-type epitaxial layer activation Srabanti Chowdhury Dong Ji
S19-069 Heterogenous Integration of Diamond and GaN Transistors for Complementary Logic Operation Srabanti Chowdhury Mohamadali Malakoutian Matthew Laurent Siwei Li Chenhao Ren
S20-206 Space Charge Trap-Assisted Recombination Suppressing Layer for Low-Voltage Light-Emitting Diode Operation Parthiban Santhanam Shanhui Fan
S20-204 Photonic Device Metasurface Optimization with Guaranteed Device Fabricability Jonathan Fan Jiaqi Jiang Mingkun Chen